Tytan Stack Tube #1 Manufacturer: Tystar Operating Instructions Authorized Users

General Information and Usage: Tube #1
The Tystar oxidation furnace is primarily for oxidation/annealing batches of 4" silicon wafers (up to 25) or small samples placed on the surface of one 4" silicon wafer. The samples are placed in an atmosphere of constantly refreshed dry oxygen, dry nitrogen, or steam (produced by reacting hydrogen with oxygen) at temperatures between 700-1150°C. At the moment there are no restrictions on the length of an oxidation/anneal. The primary use of the furnace is oxidation and annealing for silicon device fabrication.

Because this furnace is primarily used for silicon MOSFETS, it is very important to minimize contamination of the furnace. No metals are allowed in the furnace; all samples that have gone through any processing steps that included metal deposition must have the metal stripped off and cleaned using a standard RCA clean before being placed in the furnace.

Growth History

Maintenance Instructions

Contact Information for Users of PRISM Micro/Nano Fabrication Lab:
For additional information regarding the Tystar Tytan Tube #1, please contact Conrad Silvestre, Joe Palmer, or Mikhail Gaevski using e-mail addresses below.