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General Information and Usage:
This is a dual-chamber system. The left chamber is for reactive ion etching (RIE), and the right one is for plasma-enhanced chemical vapor deposition (PECVD). The two chambers share the same vacuum pumps and RF generator, but have different gases. The RIE side has O2, H2, CF4, CH4, SF6, CHF3, and Ar. The PECVD side has N2, N2O, 2% SiH4 in N2, 2% SiH4 in He, NH3,
CF4 + O2, He, and Ar. The flow rate for each gas is set by a mass-flow controller (MFC), and the pressure is controlled separately by a butterfly valve between the chamber and the pump. The maximum RF power is 500 W. The PECVD side has a heater for depositing oxides and nitrides at 250-300oC; there is no temperature control on the RIE side. All system functions are controlled from the computer. You should never need to touch the front panel controls unless the computer crashes (see the last section). The control program has both manual and automatic modes. You can program frequently used sequences and run them in automatic mode.
IMPORTANT
- Etching of organic substances (photoresists, plastic substrates, organic coatings, etc.) is prohibited in this tool.When you leave the system for any length of time, especially overnight, make sure that both chambers are pumped down, heater is reset to 25oC, and also close the gate valve by clicking ON.
- Never leave a dirty chamber for the next user. If your process leaves any flaky or colored deposits on the plates, clean them after you have finished. Use solvents or plasma; in bad cases you may have to take the top plate out of the chamber and scour it with ScotchBrite, followed by a thorough rinse.
Recipes:
Click here for the silicon oxide recipes.
Click here for the silicon nitride recipes.
Contact Information for Users of PRISM Micro/Nano Fabrication Lab:
For additional information regarding the PlasmaTherm 790, please contact the PRISM Staff at: PRISM-CLEANRM-OPS@princeton.edu
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