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General Information and Usage:
Plasmatherm 720 SLR is a single-chamber reactive ion etching system with a load lock. It is designated for etching silicon using the following gases (chlorine chemistry): Cl2, BCl3, CCl2F2, H2, Ar, CF4, and O2. The flow rate for each gas is set by a mass-flow controller (MFC), and the pressure is controlled separately by a butterfly valve between the chamber and the pump. The maximum RF power is 500 W, but practical considerations keep most etches to below 400 W. The substrate can be moderately heated (~30ºC) and chilled to well below 0ºC. All system functions are controlled from the computer. The program has both manual and automatic modes. Users can program frequently used sequences and run them in automatic mode. The system is intended for silicon etching only.
IMPORTANT
- After you are done, close the gate value by clicking ON.
- Remeber to reset standby temperature to 25 oCafter you have finished.
- Don't put any sample with metal.
- If you use power higher than 300 W, increase the power in step-wise fashion. For example, if you want to use 350 W, increase power in step-wise fashion (0 W, 100 W, 200 W, 350 W). Wait for about 30 seconds at every intermediate power. (You should include this steps in your batch file.)
Recipes (Princeton Only):
slr720_0001: Si Etching (10 um).
Contact Information for Users of PRISM Micro/Nano Fabrication Lab:
For additional information regarding the PlasmaTherm 720, please contact the PRISM Staff at: PRISM-CLEANRM-OPS@princeton.edu
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