Savannah 100 Atomic Layer Deposition System Manufacturer: Cambridge NanoTech Operating Instructions Authorized Users

General Information and Usage:
Savannah 100 Atomic Layer Deposition (ALD) system is used for the deposition of aluminum oxide on silicon. This is achieved by pulsing between two precursors, trimethylaluminum (TMA) and water vapor. Atomic layer deposition is a self-limiting process capable of precise monolayer growth. The system can handle wafers up to 4 inch diameter. The maximum deposition temperature is ~ 300ºC.

Allowed materials:  SiGeC, GaAs and its compounds, InP and its compounds, cleaned SiO2 (glass), cleaned Al2O3 (sapphire), Au (gold), Al (aluminum).
Prohibited materials:  indium, tin, zinc, iron, and organics (resist, BCB, polyimide, epoxy, tape, vacuum grease, rubber, plastic, etc.)
Cleaning procedure:  minimum of 3 times each of TCE (tricloroethylene), acetone, methanol, and DI water, including handling tools and carriers.  RCA clean is preferred.

Contact Information for Users of PRISM Micro/Nano Fabrication Lab:
For additional information regarding the Cambridge NanoTech Atomic Layer Deposition System, please contact the PRISM Staff at: PRISM-CLEANRM-OPS@princeton.edu

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