RIE800iPB ICP Reactive Ion Etcher Manufacturer: SAMCO International Operating Instructions Authorized Users

General Information and Usage:
The SAMCO International RIE800iPB is a state of the art inductively coupled plasma etcher, optimized for deep Si etching using the Bosch process.  

The tool is plumbed with SF6, C4F8, Ar, O2, and CF4. It possesses a He backside cooled electrostatic chuck that is temperature controlled with chilled water circulator.  Specimens are loaded into the process chamber by a robot arm through a load lock to protect users from hazardous etch byproducts.

Wafers of 100mm, 150mm, or 200mm diameter can be processed in the system with an appropriate change of parts in the process chamber.  Samples that are not of the standard wafer sizes listed must be mounted on a carrier wafer.

There are 2 RF power sources to control the properties of the plasma.  The first is a 3000W supply inductively coupled to the gas in the process chamber.  It generates a high density of radicals and ions with only a small potential between the plasma and the wafer surface.  An additional 300W source induces a potential between the chuck and the plasma just like a traditional RIE system.  The advantage of this combination is that the plasma density and the substrate bias can be independently controlled.

Contact Information for Users of PRISM Micro/Nano Fabrication Lab:
For additional information regarding the Samco 800iPB, please contact the PRISM Staff at: PRISM-CLEANRM-OPS@princeton.edu

Return to Equipment List